Resonant clock circuit with magnetic shield

ABSTRACT

Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.

BACKGROUND Technical Field

The present invention relates generally to clock circuits and, inparticular, to a resonant clock circuit with a magnetic shield.

Description of the Related Art

Semiconductor devices having a resonant clock circuit can includebuffers for buffering an input to the resonant clock circuit and canfurther include a clock distribution system to distribute clock signalsconditioned by the resonant clock circuit to other circuits disposedthroughout such semiconductor devices. The meshed clock distributionsystem can be a meshed clock distribution system that includes one ormore clock meshes for clock distribution.

The use of a resonant clock circuit has been shown to reduce globalclocking power and timing uncertainty. By resonating the large globalclock capacitance with an inductance, the energy used to charge theclock node each period can be recycled within an LC resonant tanknetwork of the resonant clock circuit, resulting in lower clock power.

Typically, such an arrangement as described above involves the use ofmultiple large capacitors, as well as multiple inductors. Moreover, themultiple inductors can be tuned at different frequencies, possible oneor more orders of magnitude in difference from each other.

Accordingly, undesirable problems that can result from such anarrangement and that can adversely affect semiconductor deviceperformance include, but are not limited to, the intrinsic capacitanceof the resonant clock circuit elements (e.g., inductors) as well as theparasitic capacitance of the resonant clock circuit elements.

Additionally, the resonant clock circuit elements can be susceptible toelectromagnetic interference (EMI) from external components.

Hence, there is a need for a resonant clock circuit that overcomes theaforementioned problems.

SUMMARY

According to an aspect of the present invention, a semiconductor deviceis provided. The semiconductor device includes a resonant clock circuit.The semiconductor device further includes an inductor. The semiconductordevice also includes a magnetic layer formed of a magnetic materialdisposed in between a portion of the resonant clock circuit and theinductor. Clock signals of the resonant clock circuit are utilized bythe magnetic layer. By having the magnetic layer in between the portionof the resonant clock circuit and the inductor, an area savings isrealized compared to the prior art, while providing shielding to avoidundesirable effects such as EMI from external components.

Moreover, in an implementation relating to the aforementioned aspect,the magnetic material includes another inductor, and an intrinsiccapacitance of the other inductor is used for storage. In this way,further features/capabilities (i.e., storage) can be realized.

Also, in an implementation relating to the aforementioned aspect, theclock signals of the resonant clock circuit can be utilized by themagnetic layer to reduce an effect of a parasitic capacitance of theresonant clock circuit element. In this way, overall circuit performanceis improved.

Additionally, in an implementation relating to the aforementionedaspect, the clock signals of the resonant clock circuit are utilized bythe magnetic layer to reduce an effect of an intrinsic capacitance ofthe resonant clock circuit element. In this way, overall circuitperformance is improved.

According to another aspect of the present invention, a method isprovided. The method includes arranging a magnetic layer in between aninductor and a portion of a resonant clock circuit element of a resonantclock circuit in a semiconductor device. Clock signals of the resonantclock circuit are utilized by the magnetic layer. Similar to theaforementioned semiconductor device, by having the magnetic layer inbetween the portion of the resonant clock circuit and the inductor, anarea savings is realized compared to the prior art, while providingshielding to avoid undesirable effects such as EMI from externalcomponents.

According to yet another aspect of the present invention, asemiconductor device is provided. The semiconductor device includes aresonant clock circuit having a resonant clock circuit element. Thesemiconductor device further includes a magnetic layer formed of amagnetic material disposed above a portion of the resonant clockcircuit. Clock signals of the resonant clock circuit are utilized by themagnetic layer. By having the magnetic layer above a portion of theresonant clock circuit, an area savings is realized compared to theprior art, while providing shielding to avoid undesirable effects suchas EMI from external components.

According to still another aspect of the present invention, asemiconductor device is provided. The semiconductor device includes aresonant clock circuit having a resonant clock circuit element. Thesemiconductor device further includes a magnetic layer formed of amagnetic material disposed below a portion of the resonant clockcircuit. Clock signals of the resonant clock circuit are utilized by themagnetic layer. By having the magnetic layer below a portion of theresonant clock circuit, an area savings is realized compared to theprior art, while providing shielding to avoid undesirable effects suchas EMI from external components.

According to a further aspect of the present invention, a method isprovided. The method includes arranging a magnetic layer below a portionof a resonant clock circuit element of a resonant clock circuit in asemiconductor device. Clock signals of the resonant clock circuit areutilized by the magnetic layer. Similar to the aforementionedsemiconductor device, by having the magnetic layer below a portion ofthe resonant clock circuit, an area savings is realized compared to theprior art, while providing shielding to avoid undesirable effects suchas EMI from external components.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 shows a schematic diagram for an exemplary semiconductor device,in accordance with an embodiment of the present invention;

FIG. 2 shows a flow diagram for an exemplary method for forming asemiconductor device, in accordance with an embodiment of the presentinvention; and

FIG. 3 shows a block diagram of an exemplary design flow used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture, in accordance with an embodiment of the present invention;

FIGS. 4-15 show an exemplary method 400 for forming a resonant clockcircuit with a magnetic shield, in accordance with an embodiment of thepresent invention; and

FIG. 16 shows an exemplary a resonant clock circuit with a magneticshield underneath, in accordance with an embodiment of the presentinvention.

DETAILED DESCRIPTION

The present invention is directed to a resonant clock circuit with amagnetic shield.

FIG. 1 shows a schematic diagram for an exemplary semiconductor device100, in accordance with an embodiment of the present invention.

The semiconductor device 100 includes an input stage 110, a programmablebuffers stage 120, a resonant clock circuit (also interchangeablyreferred to herein as “resonant structure”) 130, a mesh capacitor 140, aclock mesh 150, and magnetic material 160. In FIG. 1, the magneticmaterial 160 is shown semi-transparent for the sakes of illustration andclarity, in order to avoid obscuring the underlying components andconnections. The semiconductor device 100 can also include a controller170.

An output of the input stage 110 is connected to an input of theprogrammable buffers stage 120. An output of the programmable buffersstate 120 is connected to an input of the resonant clock circuit 130. Anoutput of the resonant clock circuit is connected to an input of theclock mesh 150. The clock mesh 150 includes a plurality of clock signallines for providing clock signals to various portions/elements of thesemiconductor device 100.

The input stage 110 can include a clock source 111 (e.g., a Phase LockedLoop (PLL)), and a set of clock buffers 112. The set of clock buffers112 receive a global clock signal from the clock source 111. The buffersin the set of clock buffers 112 are arranged in a series configuration.

The programmable buffers stage 120 includes a set of programmablebuffers 121. In an embodiment, the programmable buffers 121 can havevarying resistance that is controlled by the controller 170. The buffersin the set of programmable buffers 121 are arranged in a parallelconfiguration.

The resonant clock circuit 130 can include a Metal-Oxide-SemiconductorField-Effects Transistor (MOSFET) 131, a MOSFET 132, a capacitor 133, acapacitor 134, an inductor 135, and an inductor 136. The capacitors 133and 134 and the inductors 135 and 136 can be considered (and areinterchangeably referred to as) “resonant clock circuit elements”. Thecapacitors 133 and 134 and the inductors 135 and 136 form an LC resonanttank network 139. In an embodiment, the capacitors 133 and 134 can belarge capacitors.

The MOSFETS 131 and 132 are used to provide resonant enable/disablesignals to the resonant clock circuit 130 to enable/disable the resonantclock circuit 130 and/or selective modes (e.g., one or more resonantmodes (e.g., a low frequency resonant mode, a high frequency resonantmode, etc.) and a non-resonant mode) of the resonant clock circuit 130.In an embodiment, at least one of the resonant clock circuit elements(e.g., inductor 135) is tuned at a frequency at least one order ofmagnitude greater than a frequency at which at least one other one ofthe resonant clock circuit elements (e.g., inductor 136) is tuned, inorder to provide a wide-frequency operating range (e.g., from low tohigh) for the resonant clock circuit 130. A high frequency resonantclock mode is presumed to involve less clock power than a low frequencyresonant clock mode (as voltage is scaled with frequency). In anembodiment, the high frequency resonant clock mode can be used to savepower from 2.5 GHz>5 GHz. Of course, other ranges can also be used,depending upon the selected components involved, as readily appreciatedby one of ordinary skill in the art.

In an embodiment, the resonant clock circuit 130 provides a non-resonantmode (e.g., with MOSFETS 131 and 132 being open), a low frequencyresonant mode (e.g., with one of MOSFETS 131 and 132 being closed), anda high frequency resonant mode (e.g., with both of MOSFETS 131 and 132being closed). Of course, other switch configurations (e.g., involvingdifferent numbers of switches than those shown, and/or involvingdifferent numbers of switches being open or closes, etc.) for modeswitching can also be used. These and other variations of the resonantclock circuit 130 are readily determined by one of ordinary skill in theart given the teachings of the present invention provided herein, whilemaintaining the spirit of the present invention.

The resonant clock circuit 130 resonates the large capacitance of theglobal clock with an inductance so that the energy used to charge theclock node each period is recycled within the LC resonant tank network139 of the resonant clock circuit 130, resulting in lower clock power.

The mesh capacitor 140 is connected to an output of the resonant clockcircuit 130 and is used to establish a DC voltage approximately at whichthe clock mesh 150 operates.

The clock mesh 150 includes one or more clock grids 151 for localdistribution of clock signals.

The magnetic material 160 is disposed above one or more portions of theresonant clock circuit 130. For example, the magnetic material can bedisposed above conducting material (e.g., above electrically conductivelines in a Back End Of Line (BEOL) layer) that interconnect the resonantclock circuit elements and/or can be disposed (in a BEOL layer) abovethe resonant clock circuit elements themselves. The magnetic material160 can be considered to form a magnetic shield in the semiconductordevice 100.

In the example of FIG. 1, the magnetic material 160 is disposed above atleast a portion of conducting material connecting the capacitors 133 and134. Moreover, in the example of FIG. 1, the magnetic material 160 isdisposed above at least a portion of conducting material connecting theinductors 135 and 136.

The magnetic material 160 can be formed from any material and/or circuitelement having magnetic properties including, but not limited to, aninductor, and so forth. In an embodiment, the magnetic material 160 canbe formed from an inductor (e.g., but not limited to a coiled inductor).The inductor can be used to store electrical energy. The storedelectrical charge can be used to compensate for undesirable effects suchas parasitic capacitance and/or intrinsic capacitance of the inductors135 and 136.

In an embodiment, a barrier material can be included between themagnetic material 160 and the underlying devices above which themagnetic material 160 is disposed. Preferably, the barrier materialphysically separates the magnetic material 160 from the underlyingdevices and permits utilization of fields relating to current andmagnetism by the magnetic material 160.

In an embodiment, a barrier material can included between the portionsof magnetic material 160 on a magnetic material layer 161 in order toseparate the portions of magnetic material 160 on a same layer (i.e.,the magnetic material layer 161). In such a case, the magnetic materiallayer 161 would be a discontinuous layer in the BEOL disposed over aportion of the resonant clock circuit 130.

The controller 170 is an on-chip controller that can be configured to(e.g., finely or at any desired granularity) vary buffer strength (ofthe buffers, e.g., buffers 121) and switch resistance (of the switches,e.g., MOSFETs 131 and 132) of the semiconductor device 100 in order toachieve on-the-fly mode changing.

It is to be appreciated that while one each of the input stage 110, theprogrammable buffer stage 120, the resonant clock circuit 130, the meshcapacitor 140, and the clock mesh 150 of the semiconductor 100 are shownin the embodiment of FIG. 1 for the sake of illustration, in otherembodiments one or more of any of these elements can be used dependingupon the implementation, as readily appreciated by one of ordinary skillin the art given the teachings of the present invention provided herein.

Further, it is to be appreciated that while MOSFETS are shown in theembodiment of FIG. 1, other switching elements can also be used, whilemaintaining the spirit of the present invention.

Moreover, it is to be appreciated that the elements shown in FIG. 1 canpertain to a three-dimensional stacked chip that includes two or moreelectronic integrated circuit chips (referred to as strata or stratum)stacked one on top of the other. The strata can be connected to eachother with inter-strata interconnects that could use C4 or othertechnology, and the strata could use through-Silicon vias (TSVs) toconnect from the front side to the back side of the strata. The stratacould be stacked face-to-face or face-to-back where the activeelectronics can be on any of the “face” or “back” sides of a particularstratum.

While not shown, other embodiments can involve the use of sector buffersand multiplexers. The sector buffers can be used to drive multiplesectors of the semiconductor device, each having one or more respectiveclock meshes. The multiplexers can be used to select various sectors towhich clock signals are provided.

These and other variations of the semiconductor device 100 are readilydetermined by one of ordinary skill in the art given the teachings ofthe present invention provided herein, while maintaining the spirit ofthe present invention.

It is to be appreciated that the incorporation of the magnetic material160 into the semiconductor device 100 of FIG. 1 can reduce the effectsof parasitic capacitance and intrinsic capacitance of resonant clockcircuit elements such as inductors, thus improving overall performanceof the semiconductor device 100. Moreover, the semiconductor device 100of FIG. 1 reduces an amount of area(s) needed to implement theinductors, thus further resulting in an improved semiconductor device100. Additionally, the magnetic material 160 can serve as a magneticshield to mitigate or eliminate the effects of EMI on deviceperformance. These and other advantages of the present invention arereadily ascertained by one of ordinary skill in the art given theteachings of the present invention provided herein.

FIG. 2 shows a flow diagram for an exemplary method 200 for forming asemiconductor device (such as semiconductor device 100 of FIG. 1), inaccordance with an embodiment of the present invention.

At step 210, commence formation of a semiconductor device. As readilyappreciated by one of ordinary skill in the art, step 210 can involveformation of a substrate, and so forth.

At step 220, in a Front End Of Line (FEOL) formation stage of formingthe semiconductor device, commence formation of an input stage, aprogrammable buffer stage, a resonant clock circuit, a clockdistribution stage (e.g., having one or more clock meshes for localclock distribution in the semiconductor device), and a load stage. Theload stage includes one or more elements and/or circuits which use theclocks provided by the meshed clock distribution stage. The resonantclock circuit includes a set of resonant clock circuit elements. The setof resonant clock circuit elements can include, e.g., inductors (e.g.,coiled inductors) and capacitors. The resonant clock circuit can alsoinclude switching elements (e.g., MOSFETs, etc.) for enabling anddisabling the resonant clock circuit and/or modes thereof. In anembodiment, at least one of the resonant clock circuit elements can betuned at a frequency at least one order of magnitude greater than afrequency at which at least one other one of the resonant clock circuitelements can be tuned. Such varied tuning supports different resonantclock modes (e.g., a high frequency resonant clock mode and a lowfrequency resonant clock mode).

At step 230, in a Back End Of Line (BEOL) formation stage of forming thesemiconductor device, complete the formation of the stages commenced inthe FEOL formation stage including disposing magnetic material inbetween an inductor and a portion of the resonant clock circuit. Themagnetic material is disposed such that clock signals of the resonantclock circuit are utilized by the magnetic material. It is to beappreciated that any material having magnetic properties can be used asthe magnetic material. In an embodiment, the magnetic material caninclude an inductor (e.g., a coiled inductor).

In an embodiment, the intrinsic capacitance of the magnetic material(e.g., implemented as an inductor) can be used for storage. For example,electrical energy can be stored in a magnetic field of the magneticmaterial (e.g., implemented as an inductor). In an embodiment, themagnetic material can use a parasitic capacitance of one or more of theresonant clock circuit elements for operating the resonant clockcircuit.

In an embodiment, the magnetic material can be used to reduce an effect(e.g., increased clock power) of a parasitic capacitance of one or moreof the resonant clock circuit elements. In an embodiment, the magneticmaterial can be used to reduce an effect (e.g., increased clock power)of an intrinsic capacitance of one or more of the resonant clock circuitelements.

In an embodiment, the magnetic material can be used to reduce an effectof (e.g., external) electromagnetic interference on the semiconductordevice.

In an embodiment, the magnetic material can be disposed in a BEOL layerof the semiconductor device above a FEOL layer in which a resonant clockcircuit element is formed.

In an embodiment, the portion of the resonant circuit above which themagnetic material is disposed includes a top layer of the resonant clockcircuit.

In an embodiment, the magnetic material can be disposed above theresonant clock circuit element.

In an embodiment, the magnetic material can be disposed on the resonantclock circuit element.

In an embodiment, the magnetic material can be disposed over conductingmaterials connecting two or more elements of the resonant clock circuit.

It is to be appreciated that the resonant clock circuit with magneticshield can be used for applications including, but not limited to,microprocessors (with or without on-board cache), low power machinelearning accelerators, low frequency Internet of Things, and so forth.These and other applications to which the present invention can beapplied are readily determined by one of ordinary skill given theteachings of the present invention provided herein, while maintainingthe spirit of the present invention.

FIG. 3 shows a block diagram of an exemplary design flow 300 used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture, in accordance with an embodiment of the present invention.Design flow 300 includes processes, machines and/or mechanisms forprocessing design structures or devices to generate logically orotherwise functionally equivalent representations of the designstructures and/or devices described above and shown in FIG. 1. Thedesign structures processed and/or generated by design flow 300 may beencoded on machine-readable transmission or storage media to includedata and/or instructions that when executed or otherwise processed on adata processing system generate a logically, structurally, mechanically,or otherwise functionally equivalent representation of hardwarecomponents, circuits, devices, or systems. Machines include, but are notlimited to, any machine used in an IC design process, such as designing,manufacturing, or simulating a circuit, component, device, or system.For example, machines may include: lithography machines, machines and/orequipment for generating masks (e.g. e-beam writers), computers orequipment for simulating design structures, any apparatus used in themanufacturing or test process, or any machines for programmingfunctionally equivalent representations of the design structures intoany medium (e.g. a machine for programming a programmable gate array).

Design flow 300 may vary depending on the type of representation beingdesigned. For example, a design flow 300 for building an applicationspecific IC (ASIC) may differ from a design flow 300 for designing astandard component or from a design flow 300 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera Inc.or Xilinx, Inc.

FIG. 3 illustrates multiple such design structures including an inputdesign structure 320 that is preferably processed by a design process310. Input design structure 320 may be a logical simulation designstructure generated and processed by design process 310 to produce alogically equivalent functional representation of a hardware device.Input design structure 320 may also or alternatively comprise dataand/or program instructions that when processed by design process 310,generate a functional representation of the physical structure of ahardware device. Whether representing functional and/or structuraldesign features, input design structure 320 may be generated usingelectronic computer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, input design structure 320may be accessed and processed by one or more hardware and/or softwaremodules within design process 310 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 1 and 4-16. Assuch, input design structure 320 may comprise files or other datastructures including human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 310 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 1 and 4-16 to generate aNetlist 380 which may contain design structures such as input designstructure 320. Netlist 380 may comprise, for example, compiled orotherwise processed data structures representing a list of wires,discrete components, logic gates, control circuits, 310 devices, models,etc. that describes the connections to other elements and circuits in anintegrated circuit design. Netlist 380 may be synthesized using aniterative process in which netlist 380 is resynthesized one or moretimes depending on design specifications and parameters for the device.As with other design structure types described herein, netlist 380 maybe recorded on a machine-readable data storage medium or programmed intoa programmable gate array. The medium may be a non-volatile storagemedium such as a magnetic or optical disk drive, a programmable gatearray, a compact flash, or other flash memory. Additionally, or in thealternative, the medium may be a system or cache memory, buffer space,or electrically or optically conductive devices and materials on whichdata packets may be transmitted and intermediately stored via theInternet, or other networking suitable means.

Design process 310 may include hardware and software modules forprocessing a variety of input data structure types including Netlist380. Such data structure types may reside, for example, within libraryelements 330 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 340, characterization data 350, verification data 360,design rules 1070, and test data files 385 which may include input testpatterns, output test results, and other testing information. Designprocess 310 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 310 withoutdeviating from the scope and spirit of the invention. Design process 310may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 310 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processinput design structure 320 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 390.Design structure 390 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g., information stored in an IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to input designstructure 320, design structure 390 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 1 and 4-16. In one embodiment, design structure390 may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 1 and 4-16.

Design structure 390 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 390 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 1 and 4-16. Designstructure 390 may then proceed to a stage 395 where, for example, designstructure 390: proceeds to tape-out, is released to manufacturing, isreleased to a mask house, is sent to another design house, is sent backto the customer, etc.

FIGS. 4-15 show an exemplary method 400 for forming a resonant clockcircuit with a magnetic shield, in accordance with an embodiment of thepresent invention. Regarding method 400, certain materials have beenspecified for the sake of illustration. However, it is to be appreciatedthat the present invention is not limited to solely the mentionedmaterials and, thus, other materials can also be used, as readilyappreciated by one of ordinary skill in the art given the teachings ofthe present invention provided herein, while maintaining the spirit ofthe present invention. Moreover, while FIGS. 4-15 show the magneticshield above the resonant clock circuit, FIG. 16 shows an embodiment ofthe present invention, with the magnetic shield below the resonant clockcircuit.

Referring to FIG. 4, at step 405, provide a wafer substrate 501.

Referring to FIG. 5, at step 410, form Front End Of Line (FEOL)/Back EndOf Line (BEOL) layers 502 for circuits and form a non-resonant clockcircuit 503 and a resonant clock circuit 504 within the FEOL/BEOL layers502.

Referring to FIG. 6, at step 415, process the sequence to add a magneticshield. In an embodiment, step 415 can involve, for example, adding alayer of low k or a SiO₂ dielectric 505.

Referring to FIG. 7, at step 420, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 420 can involve, forexample, forming vias 506 by conventional photolithography, etching andmetallization, and chemical mechanical polishing. In an embodimentrelating to step 420, the vias 506 pass through the shield and connectto inductor wires.

Referring to FIG. 8 which pertains to an alternate embodiment withrespect to step 420 and FIG. 7, at step 420A, continue processing thesequence to add a magnetic inductor. In an embodiment, step 420A caninvolve, for example, depositing a dielectric 507A and then form wires508A by conventional photolithography, etching and metallization, andchemical mechanical polishing.

Referring to FIG. 9 (and continuing with the embodiment relating to FIG.7), at step 425, continue processing the sequence to add a magneticinductor. In an embodiment, step 425 can involve, for example,depositing a dielectric 507.

Referring to FIG. 10, at step 430, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 430 can involve, forexample, depositing a magnetic material 509 to fabricate the magneticshield. In an embodiment, the magnetic material 509 is composed ofCobalt (Co) that includes magnetic material FeTaN and/or FeNi and/orFeAlO and/or any combination thereof.

Referring to FIG. 11, at step 435, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 435 can involve, forexample, patterning the magnetic material 509. In an embodiment, thepatterning of the magnetic material can involve, for example, using anoxide hard mask 510 and a photolithography process to form resist images511 to define the shield (from the magnetic material 509).

Referring to FIG. 12 which pertains to an alternate embodiment withrespect to step 435 and FIG. 11, at step 435A, continue processing thesequence to add a magnetic inductor. In the embodiment of FIG. 14, theshield remains continuous (thus, the resist image 511 is not used).

Referring to FIG. 13, at step 440, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 440 can involve, forexample, further patterning the magnetic material. In an embodiment, thefurther patterning of the magnetic material can involve, for example,further using a photolithography process and the resist image 511.

Referring to FIG. 14, at step 445, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 445 can involve, forexample, removing the resist image 511 (e.g., using a solvent strip),depositing a dielectric 512, and performing photolithography and etchingto form vias 513 and a trench or space 514 for the inductor.

Referring to FIG. 15, at step 450, continue processing the sequence toadd a magnetic inductor. In an embodiment, step 450 can involve, forexample, adding metalization to form the inductor 515. After step 450,the final structure has a shield covering the (resonant andnon-resonant) clock circuits, and enables the inductor 515 to be formedon top of the clock circuits, thus enabling area savings compared to theprior art.

Referring to FIG. 16, an exemplary semiconductor device 1600 is shownhaving a resonant clock circuit with a magnetic shield underneath, inaccordance with an embodiment of the present invention. The same figurereference numerals from FIGS. 4-15 apply to the elements depicted inFIG. 16, emphasizing that the different between the structures in FIGS.15 and 16 is the magnetic shield over versus under the resonant circuit,respectively.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. A semiconductor device, comprising: a resonantclock circuit; an inductor; and a magnetic layer formed of a magneticmaterial disposed in between a portion of the resonant clock circuit andthe inductor, wherein clock signals of the resonant clock circuit areutilized by the magnetic layer.
 2. The semiconductor device of claim 1,wherein the resonant clock circuit element comprises the inductor. 3.The semiconductor device of claim 2, wherein the inductor is formed in aFront End Of Line layer of the semiconductor device.
 4. Thesemiconductor device of claim 3, wherein the magnetic material isdisposed in a Back End Of Line layer of the semiconductor device abovethe Front End Of Line layer in which the inductor is formed.
 5. Thesemiconductor device of claim 1, wherein the resonant clock circuitelement comprises a capacitor.
 6. The semiconductor device of claim 1,wherein the portion of the resonant circuit above which the magneticmaterial is disposed comprises a top layer of the resonant clockcircuit.
 7. The semiconductor device of claim 1, wherein the magneticmaterial is disposed above the resonant clock circuit element.
 8. Thesemiconductor device of claim 1, wherein the magnetic material isdisposed under the resonant clock circuit element.
 9. The semiconductordevice of claim 1, wherein the magnetic material is disposed on theresonant clock circuit element.
 10. The semiconductor device of claim 1,wherein the magnetic material is disposed in a Back End Of Line layer ofthe semiconductor device.
 11. The semiconductor device of claim 1,wherein the magnetic material comprises another inductor.
 12. Thesemiconductor device of claim 11, wherein an intrinsic capacitance ofthe other inductor is used for storage.
 13. The semiconductor device ofclaim 1, wherein the resonant clock circuit element is proximate toanother resonant clock circuit element, and the magnetic material isdisposed above at least a portion of a conducting material connectingthe resonant clock circuit element to the other resonant clock circuitelement.
 14. The semiconductor device of claim 13, wherein the resonantclock circuit element is tuned at a frequency at least one order ofmagnitude greater than a frequency at which the other resonant clockcircuit element is tuned.
 15. The semiconductor device of claim 1,wherein the resonant clock circuit further comprises a set of buffers,coupled to the resonant clock circuit element, and wherein the magneticmaterial is disposed above at least a portion of a conducting materialconnecting the set of buffers to the resonant clock circuit element. 16.The semiconductor device of claim 1, wherein the resonant clock circuitelement is electrically connected to another resonant clock circuitelement by a conducting material, and wherein the magnetic material isdisposed above the conducting material to reduce a parasitic capacitanceof the resonant clock circuit element and the other resonant clockcircuit element.
 17. The semiconductor device of claim 1, wherein theresonant clock circuit element is electrically connected to anotherresonant clock circuit element by a conducting material, and wherein themagnetic material is disposed above the conducting material to use aparasitic capacitance of the resonant clock circuit element and theother resonant clock circuit element for operating the resonant clockcircuit.
 18. The semiconductor device of claim 1, wherein the resonantclock circuit element comprises an inductor-capacitor pair.
 19. Thesemiconductor device of claim 1, wherein the clock signals of theresonant clock circuit are utilized by the magnetic layer to reduce aneffect of a parasitic capacitance of the resonant clock circuit element.20. The semiconductor device of claim 1, wherein the clock signals ofthe resonant clock circuit are utilized by the magnetic layer to reducean effect of an intrinsic capacitance of the resonant clock circuitelement.
 21. The semiconductor device of claim 1, wherein the resonantclock circuit has multiple resonant modes.
 22. A semiconductor device,comprising: a resonant clock circuit having a resonant clock circuitelement; and a magnetic layer formed of a magnetic material disposedabove a portion of the resonant clock circuit, wherein clock signals ofthe resonant clock circuit are utilized by the magnetic layer.
 23. Asemiconductor device, comprising: a resonant clock circuit having aresonant clock circuit element; and a magnetic layer formed of amagnetic material disposed below a portion of the resonant clockcircuit, wherein clock signals of the resonant clock circuit areutilized by the magnetic layer.